STP22NM50

www.DataSheet4U.com STP22NM50 - STP22NM50FP STB22NM50 - STB22NM50-1 N-CHANNEL 500V - 0.16Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh™Power MOSFET ADVANCED DATA TYPE STP22NM50 STP22NM50FP STB22NM50 STB22NM50-1 s s s s s VDSS 500 V 500 V 500 V 500 V RDS(on) <0.215Ω <0.215Ω <0.215Ω <0.215Ω Rds(on)*Qg 6.4 Ω*nC 6.4 Ω*nC 6.4 Ω*nC 6.4 Ω*nC ID 20 A 20 A 20 A 20 A 3 1 TYPICAL RDS(on) = 0.16Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE D2PAK TO-220 3 1 2 TO-220FP 12 3 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT dv/dt(1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Di...