www.DataSheet4U.com
®
STP22NE10L
N - CHANNEL 100V - 0.07 Ω - 22A TO-220 STripFET™ POWER MOSFET
TYPE STP22NE10L
s s s
...
www.DataSheet4U.com
®
STP22NE10L
N - CHANNEL 100V - 0.07 Ω - 22A TO-220 STripFET™ POWER MOSFET
TYPE STP22NE10L
s s s
V DSS 100 V
R DS(on) < 0.085 Ω
ID 22 A
TYPICAL RDS(on) = 0.07 Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS
3 1 2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID ID I DM ( ) P tot E AS ( 1 ) T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
o
Value 100 100 ± 20 22 14 88 90 0.6 250 -65 to 175 175
( 1) starting Tj = 25 oC, ID =22A , VDD = 50V
Unit V V V A A A W W /o C mJ
o o
C C
() Pulse width limited by safe operating area
November 1999
1/8
STP22NE10L
THERMAL DATA
R thj -case R thj -amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junct...