N-CHANNEL Power MOSFET
STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220...
Description
STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
Features
Order codes VDSS
RDS(on) max
RDS(on)*Qg
ID
STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80
< 0.40 Ω
14Ω*nC
11 A
■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry
Applications
■ Switching applications
Description
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
3 1
D²PAK
3 2 1
TO-220FP
123
I²PAK
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
$
' 3
!-V
Table 1. Device summary Order codes STB11NM80 STF11NM80 STI11NM80 STP11NM80 STW11NM80
Marking B11NM80 F11NM80 I11NM80 P11NM80 W11NM80
Package D²PAK
TO-220FP I²PAK TO-220 TO-247
Packaging Tape and reel
Tube
September 2011
Doc ID 9241 Rev 11
1/22
www.st.com
22
Contents
Contents
STB/F/I/P/W11NM80
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . ...
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