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STW11NK90Z Dataheets PDF



Part Number STW11NK90Z
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-channel Zener-protected SuperMESH Power MOSFET
Datasheet STW11NK90Z DatasheetSTW11NK90Z Datasheet (PDF)

www.DataSheet4U.com STW11NK90Z N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type STW11NK90Z ■ ■ ■ ■ ■ VDSS 900V RDS(on) <0.98Ω ID 9.2A Pw 200W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeability TO-247 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to.

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www.DataSheet4U.com STW11NK90Z N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type STW11NK90Z ■ ■ ■ ■ ■ VDSS 900V RDS(on) <0.98Ω ID 9.2A Pw 200W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeability TO-247 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products Internal schematic diagram Applications ■ Switching application Order codes Part number STW11NK90Z Marking W11NK90Z Package TO-247 Packaging Tube July 2006 Rev 2 1/12 www.st.com 12 Contents STW11NK90Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 5 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STW11NK90Z Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20KΩ) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak diode recovery voltage slope Operating junction temperature Storage temperature Value 900 900 ± 30 9.2 5.8 36.8 200 1.51 6000 4.5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C PTOT VESD(G-D) dv/dt TJ Tstg (2) 1. Pulse width limited by safe operating area 2. ISD < 9.2A, di/dt < 200A/µs, VDD =80%V(BR)DSS Table 2. Symbol Rthj-case Rthj-a Tl Thermal resistance Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 0.66 50 300 Unit °C/W °C/W °C Table 3. Symbol IAR EAS Avalanche data Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value 9.2 400 Unit A mJ 3/12 Electrical characteristics STW11NK90Z 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VD.


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