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STW11NK90Z
N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH™ Power MOSFET
General features
Type STW11NK90Z
■ ■ ■ ■ ■
VDSS 900V
RDS(on) <0.98Ω
ID 9.2A
Pw 200W
100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeability TO-247
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number STW11NK90Z Marking W11NK90Z Package TO-247 Packaging Tube
July 2006
Rev 2
1/12
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Contents
STW11NK90Z
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 5
3 4 5
Test circuits
.............................................. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STW11NK90Z
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID ID IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20KΩ) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak diode recovery voltage slope Operating junction temperature Storage temperature Value 900 900 ± 30 9.2 5.8 36.8 200 1.51 6000 4.5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C
PTOT
VESD(G-D) dv/dt TJ Tstg
(2)
1. Pulse width limited by safe operating area 2. ISD < 9.2A, di/dt < 200A/µs, VDD =80%V(BR)DSS
Table 2.
Symbol Rthj-case Rthj-a Tl
Thermal resistance
Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 0.66 50 300 Unit °C/W °C/W °C
Table 3.
Symbol IAR EAS
Avalanche data
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value 9.2 400 Unit A mJ
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Electrical characteristics
STW11NK90Z
2
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VD.