RB550EA

www.DataSheet4U.com RB550EA Diodes Schottky barrier diode RB550EA zApplications Low current rectification z External dimensions (Unit : mm) 2.9±0.1 0.4　－0.05 Each リードとも lead has same dimension ＋0.1 z Land size figure (Unit : mm) 0.8 1.0 min. 0.16±0.1 0.06 zFeatures 1) Small mold type. (TSMD5) 2) Low VF, low IR. 3) High reliability. (5) (4) 0.45 0.35 2.8±0.2 ＋0.2 －0.1 0.7 0.35 0.45 1.6 0～0.1 0.3～0.6 0.95 TSMD5 0.95 1.9 (1) 0.95 (2) 0.95 (3) 0.33±0.03 0.7±0.1 0.85±0.1 1.0Max 1.9±0.2 zStructure zConstruction Silicon epitaxial planar ROHM : TSMD5 dot(year week factory) + day z Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 1.75±0.1 3.5±0.05 3.2±0.08 8.0±0.2 3.2±0.08 4.0±0.1 φ1.1±0.1 0～0.5 5.5±0.2 3.2±0.08 1.1±0.08 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （t=1msec) Junction temperature Storage temperature (*1) Rating of per diode. Symbol VR Io IFSM Tj Tstg Limits 30 0.7 12 150 -40 to +150 Unit V A A ℃ ℃ zElectrical characteristics (Ta=25°C, Rating of per diode.) Parameter Forward voltage Reverse current ESD break down voltage Symbol VF1 IR1 IR2 ESD Min. 0.39 Typ. 0.45 1 5.0 Max. 0.49 30.00 50 Unit V µA µA KV Conditions IF=0.7A VR=10V VR=30V C=100PF,R=1.5KΩ Forwad and reverse : 1 times 15 2.4 1/3 RB550EA Diodes zElectrical characteristic curves (Ta=25°C) 1 Ta=75℃ 100000 Ta=150℃ 10000 Ta=125℃ Ta=75℃ Ta=25℃ 1000 f=1MHz FORWARD CURRE...