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MRF373S Dataheets PDF



Part Number MRF373S
Manufacturers Motorola
Logo Motorola
Description The RF MOSFET Line RF Power Field Effect Transistors
Datasheet MRF373S DatasheetMRF373S Datasheet (PDF)

MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides (http://mot–sps.com/rf/sg/sg.html) for scheduled introduction dates. Order this document by MRF373/D The RF MOSFET Line MRF373 MRF373S 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Design.

  MRF373S   MRF373S



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MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides (http://mot–sps.com/rf/sg/sg.html) for scheduled introduction dates. Order this document by MRF373/D The RF MOSFET Line MRF373 MRF373S 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment. • Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture Output Power – 60 Watts Power Gain – 13 dB Efficiency – 50% • Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture Output Power – 100 Watts (PEP) D Power Gain – 11.2 dB Efficiency – 40% IMD – –30 dBc • Excellent Thermal Stability • 100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW CASE 360B–03, STYLE 1 (MRF373) G CASE 360C–03, STYLE 1 (MRF373S) S MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Drain Current – Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature MRF373S Symbol VDSS VGS ID PD Tstg TJ Value 65 ± 20 7 173 1.33 – 65 to +150 200 Unit Vdc Vdc Adc W W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case MRF373S MRF373 Symbol RθJC RθJC Max 0.75 1 Unit °C/W °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MOTOROLA WIRELESS SEMICONDUCTOR © Motorola, Inc. 2000 SOLUTIONS – RF AND IF DEVICE DATA MRF373 MRF373S 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID =1 µA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) Gate–Source Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 65 – – – – – – 1 1 Vdc µAdc µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 200 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) Drain–Source On–Voltage (VGS = 10 V, ID = 3 A) Forward Transconductance (VDS = 10 V, ID = 3 A) VGS(th) VGS(Q) VDS(on) gfs 2 3 – 2.2 3 4 0.6 2.9 4 5 0.8 – Vdc Vdc Vdc S DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Ciss Coss Crss – – – 79 46 4 – – – pF pF pF FUNCTIONAL CHARACTERISTICS, CW Operation Common Source Power Gain (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz) Drain Efficiency (VDD = 2.


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