Document
MOTOROLA
www.DataSheet4U.com
SEMICONDUCTOR TECHNICAL DATA
Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides (http://mot–sps.com/rf/sg/sg.html) for scheduled introduction dates.
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The RF MOSFET Line
MRF373 MRF373S
60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment. • Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture Output Power – 60 Watts Power Gain – 13 dB Efficiency – 50% • Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture Output Power – 100 Watts (PEP) D Power Gain – 11.2 dB Efficiency – 40% IMD – –30 dBc • Excellent Thermal Stability • 100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW
CASE 360B–03, STYLE 1 (MRF373)
G
CASE 360C–03, STYLE 1 (MRF373S)
S
MAXIMUM RATINGS
Rating Drain–Source Voltage Gate–Source Voltage Drain Current – Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature MRF373S Symbol VDSS VGS ID PD Tstg TJ Value 65 ± 20 7 173 1.33 – 65 to +150 200 Unit Vdc Vdc Adc W W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case MRF373S MRF373 Symbol RθJC RθJC Max 0.75 1 Unit °C/W °C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 4
MOTOROLA WIRELESS SEMICONDUCTOR © Motorola, Inc. 2000 SOLUTIONS – RF AND IF DEVICE DATA
MRF373 MRF373S 1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID =1 µA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) Gate–Source Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 65 – – – – – – 1 1 Vdc µAdc µAdc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 200 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) Drain–Source On–Voltage (VGS = 10 V, ID = 3 A) Forward Transconductance (VDS = 10 V, ID = 3 A) VGS(th) VGS(Q) VDS(on) gfs 2 3 – 2.2 3 4 0.6 2.9 4 5 0.8 – Vdc Vdc Vdc S
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Ciss Coss Crss – – – 79 46 4 – – – pF pF pF
FUNCTIONAL CHARACTERISTICS, CW Operation
Common Source Power Gain (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz) Drain Efficiency (VDD = 2.