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SEP8506

GaAs Infrared Emitting Diode

Description

www.DataSheet4U.com SEP8506 GaAs Infrared Emitting Diode FEATURES Side-emitting plastic package 50¡ (nominal) beam angle 935 nm wavelength Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger INFRA-20.TIF DESCRIPTION The SEP8506 is a gallium arsenide infrared emitting diod...

Honeywell

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SEP8506 GaAs Infrared Emitting Diode - Honeywell

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