DatasheetsPDF.com

BTS775G Dataheets PDF



Part Number BTS775G
Manufacturers Siemens Semiconductor
Logo Siemens Semiconductor
Description TrilithIC
Datasheet BTS775G DatasheetBTS775G Datasheet (PDF)

www.DataSheet4U.com TrilithIC™ BTS 775 G Overview Features • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low RDS ON @ 25 °C: High-side switch: typ.85 mΩ, P-DSO-28-9 Low-side switch: typ. 45 mΩ Very high peak current capability Very low quiescent current Space- and thermal optimized power P-DSO-Package Full short-circuit-protection Operates up to 40 V Status flag diagnosis Overtemperature shut down with hysteresis Sho.

  BTS775G   BTS775G


Document
www.DataSheet4U.com TrilithIC™ BTS 775 G Overview Features • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low RDS ON @ 25 °C: High-side switch: typ.85 mΩ, P-DSO-28-9 Low-side switch: typ. 45 mΩ Very high peak current capability Very low quiescent current Space- and thermal optimized power P-DSO-Package Full short-circuit-protection Operates up to 40 V Status flag diagnosis Overtemperature shut down with hysteresis Short-circuit detection and diagnosis Open-load detection and diagnosis C-MOS compatible inputs Internal clamp diodes Isolated sources for external current sensing Over- and under-voltage detection with hysteresis Ordering Code Q67007-A9350 Package P-DSO-28-9 • • • • • • • • • • • • • Type BTS 775 G Description The BTS 775 G is a TrilithIC contains one double high-side switch and two low-side switches in one P-DSO-28-9 -Package. “Silicon instead of heatsink” becomes true The ultra low RDS ON of this device avoids powerdissipation. It saves costs in mechanical construction and mounting and increases the efficiency. The high-side switches are produced in the SIEMENS SMART SIPMOS® technology. It is fully protected and contains the signal conditioning circuitry for diagnosis. (The comparable standard high-side product is the BTS 621L1.) Semiconductor Group 1 1999-01-07 BTS 775 G For minimized RDS ON the two low-side switches are N channel vertical power FETs in the SIEMENS SMART SIPMOS® technology. Fully protected by embedded protection functions. (The comparable standard product is the BSP 78). Each drain of these three chips is mounted on separated leadframes (see P-DSO-28-9 pin configuration). The sources of all four power transistors are connected to separate pins. So the BTS 775 G can be used in H-Bridge configuration as well as in any other switch configuration. Moreover, it is possible to add current sense resistors. All these features open a broad range of automotive and industrial applications. Semiconductor Group 2 1999-01-07 BTS 775 G DL1 GL1 DL1 N.C. DHVS GND GH1 ST GH2 1 2 3 4 5 6 7 HS-Lead Frame 8 9 LS-Lead Frame 1 28 DL1 27 SL1 26 SL1 25 DL1 24 DHVS 23 SH1 22 SH1 21 SH2 20 SH2 19 DHVS 18 DL2 LS-Lead Frame 2 17 SL2 DHVS 10 N.C. DL2 GL2 DL2 11 12 13 14 16 SL2 15 DL2 AEP02071 Figure 1 Pin Configuration (top view) Semiconductor Group 3 1999-01-07 BTS 775 G Pin Definitions and Functions Pin No. 1, 3, 25, 28 2 4 5, 10, 19, 24 6 7 8 9 11 12, 14, 15, 18 13 16, 17 20, 21 22, 23 26, 27 1) Symbol DL1 GL1 N.C. DHVS GND GH1 ST GH2 N.C. DL2 GL2 SL2 SH2 SH1 SL1 Function Drain of low-side switch1 Leadframe 1 1) Gate of low-side switch1 not connected Drain of high-side switches and power supply voltage Leadframe 2 1) Ground Gate of high-side switch1 Status of high-side switches; open Drain output Gate of high-side switch2 not connected Drain of low-side switch2 Leadframe 3 1) Gate of low-side switch2 Source of low-side switch2 Source of high-side switch2 Source of high-side switch1 Source of low-side switch1 To reduce the thermal resistance these pins are direct connected via metal bridges to the leadframe. Bold type: Pin needs power wiring Semiconductor Group 4 1999-01-07 BTS 775 G DHVS 5, 10, 19, 24 ST 8 Diagnosis Biasing and Protection GH1 7 GH2 9 Driver IN OUT 0 0 L L 0 1 L H 1 0 H L 1 1 H H R O1 R O2 20, 21 SH2 12, 14, 15, 18 GND 6 Protection 22, 23 1, 3, 25, 28 DL2 SH1 DL1 GL1 2 Gate Driver Protection GL2 13 Gate Driver 26, 27 SL1 16, 17 SL2 AEB02676 Figure 2 Block Diagram Semiconductor Group 5 1999-01-07 BTS 775 G Circuit Description Input Circuit The control inputs GH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages. The inputs GL1 and GL2 are connected to the internal gate-driving units of the fully protected N-channel vertical power-MOS-FETs. Output Stages The output stages consist of an ultra low RDS ON Power-MOS H-Bridge. Embedded protective circuits make the outputs short circuit proof to ground, to the supply voltage and load short circuit proof. Positive and negative voltage spikes, which occur when driving inductive loads, are limited by integrated power clamp diodes. Short Circuit Protection The outputs are protected against – output short circuit to ground – output short circuit to the supply voltage, and – overload (load short circuit). An internal OP-Amp controls the Drain-Source-Voltage by comparing the DS-VoltageDrop with an internal reference voltage. Above this trippoint the OP-Amp reduces the output current depending on the junction temperature and the drop voltage. In the case of overloaded high-side switches the status output is set to low. If the HS-Switches are in OFF-state-Condition internal resistors RO1,2 from SH1,2 to GND pull the voltage at SH1,2 to low values. On each output pin SH1 and .


BTS7751G BTS775G EMB19


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)