SI7116DN

www.DataSheet4U.com Si7116DN Vishay Siliconix N-Channel 40-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES ID (A) 16.4 14.5 rDS(on) (W) 0.0078 @ VGS = 10 V 0.010 @ VGS = 4.5 V Qg (Typ) 15 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized D 100% Rg Tested RoHS COMPLIANT PowerPAK 1212-8 APPLICATIONS D Synchronous Rectification D Intermediate Switch D Synchronous Buck D S 3 4 G 3.30 mm S 1 2 S 3.30 mm D 8 7 6 5 D D D G Bottom View S Ordering Information: Si7116DN-T1—E3 (Lead (Pb)-Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c L = 0.1 0 1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 40 "20 16.4 Steady State Unit V 10.5 8.4 60 A 1.3 15 11 mJ 1.5 0.8 –55 to 150 260 W ID IDM IS IAS EAS 13.1 3.2 3.8 PD TJ, Tstg 2.0 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case (Drain) t v 10 sec Steady State Steady State RthJA RthJC Symbol Typical 24 65 1.9 Maximum 33 81 2.4 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile (h...