SGB-4333

www.DataSheet4U.com Product Description Sirenza Microdevices’ SGB-4333 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to 5V supply the SGB-4333 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-4333 product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band. SGB-4333 DC – 3 GHz Active Bias Gain Block Product Features Functional Block Diagram Vbias VCC NC NC Active Bias NC NC NC NC RFOUT High reliability SiGe HBT Technology Robust Class 1C ESD Simple and small size P1dB = 10.0dBm @ 1950MHz IP3 = 22.5 dBm @ 1950MHz Low Thermal Resistance = 76 C/W RFIN NC NC Applications 3V Battery operated applications LO buffer amp RF pre-driver and RF receive path Unit MHz Min. DC 17.5 dB 13.0 14.5 14.0 11.5 dBm 8.5 10.0 9.5 25.0 dB 20.0 22.5 21.0 dB dB mA dB ºC/W 8.5 8.5 48 10.5 10.5 56 4.0 76 62 5.0 16.0 Typ. Max. 3000 Key Specifications Symbol fO S21 Parameters: Test Conditions Z0 = 50Ω, VCC = 3.0V, Ic = 56mA, T = 30ºC) Frequency of Operation Small Signal Gain –...