HAT2160H
Silicon N Channel Power MOS FET Power Switching
Features
Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 2.1 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5
1 234
5 D
4 G
SSS 123
REJ03G0002-0300 Rev.3.00
Sep 26, 2005
1, 2, 3 Source
4
Gate
5
...
