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RA60H1317M

Part Number	RA60H1317M
Manufacturer	Mitsubishi Electric
Description	Silicon RF Power Modules
Features	• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Bro...
Published	Feb 16, 2007
Datasheet	RA60H1317M PDF File

Features

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear o...

Similar Datasheet

RA60H1317M Silicon RF Power Modules - Mitsubishi Electric

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