MRF18030BSR3

MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18030B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 – 1990 MHz. Typical GSM Performance: Power Gain – 14 dB (Typ) @ 30 Watts Efficiency – 50% (Typ) @ 30 Watts Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W CW Output Power Excellent Thermal Stability Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. MRF18030BR3 MRF18030BSR3 GSM/GSM EDGE 1.93 – 1.99 GHz, 30 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465E–03, STYLE 1 NI–400 MRF18030BR3 CASE 465F–03, STYLE 1 NI–400S MRF18030BSR3 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 +15, –0.5 83.3 0.48 –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol...