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EE-SF5 Dataheets PDF



Part Number EE-SF5
Manufacturers Omron Electronics
Logo Omron Electronics
Description Photomicrosensor
Datasheet EE-SF5 DatasheetEE-SF5 Datasheet (PDF)

Photomicrosensor (Reflective) EE-SF5(-B) Be sure to read Precautions on page 24. ■ Dimensions Note: All units are in millimeters unless otherwise indicated. Matted 1.9 dia. 2.2±0.2 dia. hole ■ Features • Dust-tight construction. • With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps. • Mounted with M2 screws. • Model with soldering terminals (EE-SF5). • Model with PCB terminals (EE-SF5-B). • R.

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Photomicrosensor (Reflective) EE-SF5(-B) Be sure to read Precautions on page 24. ■ Dimensions Note: All units are in millimeters unless otherwise indicated. Matted 1.9 dia. 2.2±0.2 dia. hole ■ Features • Dust-tight construction. • With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps. • Mounted with M2 screws. • Model with soldering terminals (EE-SF5). • Model with PCB terminals (EE-SF5-B). • Recommended sensing distance = 5.0 mm ■ Absolute Maximum Ratings (Ta = 25°C) Four, 0.25 7.62±0.3 Four, 1.5 Four, 0.5 7.6±1 2.54±0.2 EE-SF5 2.54 EE-SF5-B Internal Circuit A E Unless otherwise specified, the tolerances are as shown below. KC Terminal No. A K C E Name Anode Cathode Collector Emitter Dimensions 3 mm max. 3 < mm ≤ 6 6 < mm ≤ 10 10 < mm ≤ 18 18 < mm ≤ 30 Tolerance ±0.3 ±0.375 ±0.45 ±0.55 ±0.65 Emitter Item Forward current Pulse forward current Reverse voltage Detector Collector–Emitter voltage Emitter–Collector voltage Collector current Collector dissipation Ambient tem- Operating perature Storage Soldering temperature Symbol IF IFP VR VCEO VECO IC PC Topr Tstg Tsol Rated value 50 mA (see note 1) 1A (see note 2) 4V 30 V --- 20 mA 100 mW (see note 1) –25°C to 80°C –30°C to 80°C 260°C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Emitter Detector Item Forward voltage Reverse current Peak emission wavelength Light current Symbol VF IR λP IL Value 1.2 V typ., 1.5 V max. 0.01 μA typ., 10 μA max. 940 nm typ. 200 μA min., 2,000 μA max. Dark current Leakage current ID ILEAK Rising time Falling time Collector–Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wave- λP length tr tf 2 nA typ., 200 nA max. 2 μA max. --- 850 nm typ. 30 μs typ. 30 μs typ. Condition IF = 30 mA VR = 4 V IF = 20 mA IF = 20 mA, VCE = 10 V White paper with a reflection ratio of 90%, d = 5 mm (see note) VCE = 10 V, 0 lx IF = 20 mA, VCE = 10 V with no reflection --- VCE = 10 V VCC = 5 V, RL = 1 kΩ, IL = 1 mA VCC = 5 V, RL = 1 kΩ, IL = 1 mA Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 172 EE-SF5(-B) Photomicrosensor (Reflective) Light current IL (mA) Collector dissipation PC (mW) Light current IL (μA) Forward current IF (mA) ■ Engineering Data Forward Current vs. Collector Dissipation Temperature Rating Light Current vs. Forward Current Characteristics (Typical) Ta = 25°C VCE = 10 V d = 5 mm Sensing object: White paper with a reflection factor of 90% Light Current vs. Collector−Emitter Voltage Characteristics (Typical) Ta = 25°C d = 5 mm Sensing object: IF = 40 mA White paper with a reflection factor of 90% IF = 30 mA IF = 20 mA IF = 10 mA Ambient tempera.


CS1089 EE-SF5 GM5020


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