www.DataSheet4U.com
MOS
(PTY) LTD.
M2006C PIR Motion Detector
Microsystems On Silicon Member of ELMOS Semiconductor ...
www.DataSheet4U.com
MOS
(PTY) LTD.
M2006C PIR Motion Detector
Microsystems On Silicon Member of ELMOS Semiconductor AG
General Description___________
The M2006C integrated circuit combines all required functions for a single chip Passive Infra Red (PIR) motion detector. A relay and a LED output are provided for interfacing to an occupancy detect or alarm system. One or two PIR sensors connect directly to the PIR inputs. The pull-down resistors and DC decoupling circuitry are integrated on chip. The PIR signal is converted to a 15 bit digital value. The parameters for sensitivity, pulse count and timing are set by means of connecting the corresponding inputs to VDD, VSS or leaving them open. The voltage level on the temperature compensation input is converted to a digital value with 4 bit resolution. All signal processing is performed digitally.
Applications_________________
♦ ♦ ♦ ♦ PIR motion detection Intruder detection Occupancy detection Motion sensor lights
Features_____________________
♦ Digital signal processing ♦ On chip supply
regulator with wide operating voltage range ♦ Low power consumption ♦ Temperature compensation input ♦ Differential PIR sensor input ♦ Selectable relay output polarity ♦ Selectable pulse count and timing algorithm for motion detection
Single Sensor Application Circuit________________________________
VSS
U1
14 VSSA VB 10
C1
D1
Supply
C2
11 12 VDDA PIRIN LED 20
L1
Alarm
R2 RE1
IRA1
RELAY 13 NPIRIN VDD
19
Alarm
2 1
T hre shold ...