BLF4G10S-120

www.DataSheet4U.com BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance RF performance at Th = 25 °C in a common base class-AB test circuit. Mode of operation CW 2-tone [1] [2] f (MHz) VDS (V) PL (W) 120 48 (AV) Gp (dB) (typ) 19 19 ηD (%) 57 40 46 ACPR400 ACPR600 EVMrms IMD3 (dBc) (dBc) (dBc) (%) (typ) (typ) (typ) −61 [1] −72 [2] 1.5 −31 861 to 961 28 861 to 961 28 GSM EDGE 861 to 961 28 120 (PEP) 19 ACPR400 at 30 kHz resolution bandwidth ACPR600 at 30 kHz resolution bandwidth CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features s Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efficiency = 40 % (typ) x ACPR400 = −61 dBc (typ) x ACPR600 = −72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (800 MHz to 1000 MHz) s Internally matched for ease of use www.DataSheet4U.com Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 1.3 Applications s RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier applications in...