MT28F322D20

www.DataSheet4U.com 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D20 MT28F322D18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES Flexible dual-bank architecture – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa – Read bank a during erase bank b and vice versa Basic configuration: Seventy-one erasable blocks – Bank a (8Mb for data storage) – Bank b (24Mb for program storage) VCC, VCCQ, VPP voltages – 1.70V (MIN), 1.90V (MAX) VCC, VCCQ (MT28F322D18 only) – 1.80V VCC, VCCQ (MIN); 2.20V VCC (MAX)and 2.25V VCCQ (MAX) (MT28F322D20 only) – 0.9V (TYP) VPP (in-system PROGRAM/ERASE) – 12V ±5% (HV) VPP tolerant (factory programming compatibility) Random access time: 70ns/80ns @ 1.70V VCC Burst Mode read access (MT28F322D20) – MAX clock rate: 54 MHz (tCLK = 18.5ns) – Burst latency: 70ns @ 1.80V VCC and 54 MHz – tACLK: 17ns @ 1.80V VCC and 54 MHz Page Mode read access1 – Eight-word page – Interpage read access: 70ns/80ns @ 1.80V – Intrapage read access: 30ns @ 1.80V Low power consumption (VCC = 2.20V) – Asynchronous READ < 15mA (MAX) – Standby < 50µA – Automatic power saving feature (APS) Enhanced write and erase suspend options – ERASE-SUSPEND-to-READ within same bank – PROGRAM-SUSPEND-to-READ within same bank – ERASE-SUSPEND-to-PROGRAM within same bank Dual 64-bit chip protection registers for security purposes Cross-compatible command support – Extended command set –...