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MITSUBISHI SEMICONDUCTOR
MGF0952P
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
DESCRIPTION
The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
FEATURES
High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25Bm High power gain Glp=13.5dB(TYP.) @f=2.15GHz High power added eff...