XN0B301

www.DataSheet4U.com Composite Transistors XN0B301 (XN1B301) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm For general amplification ■ Features Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half 2 3 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 4 5 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 1 ■ Basic Part Number 2SB0709A (2SB709A) + 2SD0601A (2SD601A) 10˚ 1.1+0.2 –0.1 0.65±0.15 0.30+0.10 –0.05 Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Rating −60 −50 −7 −100 −200 60 50 7 100 200 300 150 −55 to +150 Unit V V V mA mA V Tr2 1: Collector (Tr1) 2: Collector (Tr2) 3: Emitter (Tr2) EIAJ: SC-74A Marking Symbol: 4Q Internal Connection 3 4 5 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 4: Base (Tr2) Emitter (Tr1) 5: Base (Tr1) Mini5-G1 Package 1.1+0.3 –0.1 Tr1 V V mA mA mW °C °C 2 1 Note) The part number in the parenthesis shows conventional part number. Publication date: December 2003 SJJ00117CED 0.4±0.2 5˚ 1 XN0B301 ■ Electrical Characteristics Ta = 25°...