SSM6N17FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N17FU
High Speed Switching Applications Analog...
SSM6N17FU
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM6N17FU
High Speed Switching Applications Analog Switch Applications
Suitable for high-density mounting due to compact package High drain-source voltage High speed switching
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
50
V
Gate-Source voltage
VGSS
±7
V
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
ID
100 mA
IDP
200
PD(Note 1)
200
mW
Tch
150
°C
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
JEITA
SC-70 (6pin)
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
TOSHIBA
2-2J1C
Please design the appropriate reliability upon reviewing the
Weight: 6.8 mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Total rating,Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6)
0.4 mm
0.8 mm
Marking
6
5
4
Equivalent Circuit
6
5
4
DM
1
2
3
Q1 Q2
1
2
3
This
transistor is a el...
