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SSM6N16FU

Toshiba Semiconductor
Part Number SSM6N16FU
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jan 27, 2007
Detailed Description SSM6N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FU High Speed Switching Applications Analog...
Datasheet PDF File SSM6N16FU PDF File

SSM6N16FU
SSM6N16FU

Overview
SSM6N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FU High Speed Switching Applications Analog Switch Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 3.
0 Ω (max) (@VGS = 4 V) : Ron = 4.
0 Ω (max) (@VGS = 2.
5 V) : Ron = 15 Ω (max) (@VGS = 1.
5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±10 V Drain current DC Pulse ID 100 mA IDP 200 Drain power dissipation (Ta = 25°C) PD(Note 1) 200 mW JEDEC ― Channel temperature Storage temperature range Tch 150 °C Tstg −55~150 °C JEITA TO...


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