SSM6N09FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N09FU
High Speed Switching Applications
Unit:...
SSM6N09FU
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM6N09FU
High Speed Switching Applications
Unit: mm
Small package Low Drain-Source ON resistance.
: Ron = 0.7 Ω (max) (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
30
V
Gate-Source voltage
VGSS
±20
V
Drain current
DC Pulse
ID
400
mA
IDP
800
Drain power dissipation (Ta = 25°C) PD (Note 1)
300
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6) Figure 1.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is p...