SSM6N03FE

SSM6N03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N03FE High Speed Switching Applications Analog Switch Applications Unit: mm · Input impedance is high. Driving current is extremely low. · Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. · High-speed switching. · Housed in a ultra-small package which is suitable for high density mounting. Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature VDS 20 V VGSS 10 V ID 100 mA PD (Note 1) 150 mW Tch 150 °C Tstg -55~150 °C Note 1: Total rating, mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.135 mm2 ´ 6) 0.3 mm JEDEC JEITA TOSHIBA Weight: ― ― 2-2N1D g (typ.) 0.45 mm Equivalent Circuit (top view) 6 PIN 5 PIN 4 PIN Q1 Q2 1 PIN 2 PIN 3 PIN Marking 6 PIN 5 PIN 4 PIN DA 1 PIN 2 PIN 3 PIN 1 2001-11-14 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol Test Condition IGSS V (BR) DSS IDSS Vth |Yfs| RDS (ON) Ciss Crss Coss ton toff VGS = 10 V, VDS = 0 V ID = 100 mA, VGS = 0 V VDS = 20 V, VGS = ...