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Z0410xE Dataheets PDF



Part Number Z0410xE
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description STANDARD TRIACS
Datasheet Z0410xE DatasheetZ0410xE Datasheet (PDF)

www.DataSheet4U.com ® Z0410xE/F STANDARD TRIACS FEATURES IT(RMS) = 4A VDRM = 400V to 800V IGT ≤ 25mA A1 A2 G A1 A2 G DESCRIPTION The Z0410xE/F series of triacs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose switching and phase control applications. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) Parameter RMS on-state current (360° conduction angle) Z0410xE/F Z0410xF Tc= 75 °C Ta= 25 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz .

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www.DataSheet4U.com ® Z0410xE/F STANDARD TRIACS FEATURES IT(RMS) = 4A VDRM = 400V to 800V IGT ≤ 25mA A1 A2 G A1 A2 G DESCRIPTION The Z0410xE/F series of triacs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose switching and phase control applications. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) Parameter RMS on-state current (360° conduction angle) Z0410xE/F Z0410xF Tc= 75 °C Ta= 25 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Value 4 0.95 22 20 2 10 50 - 40, + 150 - 40, + 125 260 °C °C A2s A/µs A Unit A TO202-1 (Plastic) Z0410xE TO202-2 (Plastic) Z0410xF ITSM Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 0.1 A/µs. IG = 50 mA I2 t dI/dt Symbol VDRM VRRM January 1995 Parameter D Repetitive peak off-state voltage Tj = 125°C 400 Voltage M 600 S 700 N 800 Unit V 1/6 Z0410xE/F THERMAL RESISTANCES Symbol Rth(j-a) Junction to ambient Parameter Z0410xE Z0410xF Rth(j-c) Rth(j-c) Junction to case for D.C Junction to case for A.C 360° conduction angle (F=50Hz) Value 80 100 10 7.5 °C/W °C/W Unit °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 0.2 W PGM = 3 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt Test Conditions VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ VD=VDRM IG = 40mA IT = 5.5A dIG/dt = 0.5A/µs IT= 50 mA Gate open IG= 1.2 IGT Tj= 25°C Tj= 25°C Tj= 125°C Tj= 25°C Quadrant I-II-III-IV I-II-III-IV I-II-III-IV I-II-III-IV MAX MAX MIN TYP Sensitivity 10 25 1.5 0.2 2 mA V V µs Unit IGM = 1.2 A (tp = 20 µs) IH * IL Tj= 25°C Tj= 25°C I-III-IV II MAX TYP TYP MAX MAX MAX MIN TYP 25 25 50 2 5 200 200 400 5 mA mA VTM * IDRM IRRM dV/dt * ITM= 5.5A tp= 380µs VD = VDRM VR = VRRM VD=67%VDRM Gate open (dI/dt)c = 1.8 A/ms Tj= 25°C Tj= 25°C Tj= 110°C Tj= 110°C V µA V/µs (dV/dt)c * Tj= 110°C MIN V/µs * For either polarity of electrode A2 voltage with reference to electrode A1 ORDERING INFORMATION Z TRIAC TOP GLASS CURRENT 2/6 04 10 SENSITIVITY M E PACKAGES : E=TO202-1 F=TO202-2 VOLTAGE ® Z0410xE/F Fig.1 : Maximum RMS power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact (TO202-1). P (W) 180 O P(W) Tcase (o C) Rth = 0 o C/W o 5 C/W o 10 C/W 15 o C/W 7 6 5 4 3 2 1 0 0 7 = 180 = 120 = 90 o o o -75 -85 -95 -105 -115 6 5 4 3 2 I T(RMS) (A) = 60 = 30 o o 1 4 0 0 20 Tamb ( C) o 1 2 3 40 60 80 100 120 -125 140 Fig.3 : Maximum RMS power dissipation versus RMS on-state current. Fig.4 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) (TO202-2). P (W) Tcase (o C) P(W) 7 180 O 6 5 4 3 2 1.


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