MRF904

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF904 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz 2 High FT - 4 GHz (typ) @ IC = 15 mAdc 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Designed primarily for use IN High Gain, low noise general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 25 3.0 30 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.14 mWatts mW/ ºC MSC1324.PDF 10-25-99 MRF904 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= .1 mAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) 15 25 3.0 Value Typ. Max. 50 Unit Vdc Vdc Vdc nA (on) HFE DC Current Gain (IC = 5.0 mAdc, VCE = 5 Vdc) 30 200 - DYNAMIC Symbol fT Test Conditions Min. Current-Gain - Bandwidth Product (IC = 15 mAdc, VCE = 10 Vdc, f = 1 GHz) Junction Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) Noise Figure (...