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TC2320
TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET
BVDSS/BVDGS N-Channel 200V P-Channel ...
www.DataSheet4U.com
TC2320
TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET
BVDSS/BVDGS N-Channel 200V P-Channel -200V RDS(ON) (max) N-Channel 7.0 P-Channel 12 Order Number/Package SO-8 TC2320TG
Features
❑ Low threshold ❑ Low on resistance ❑ Independent, electrically isolated N- and P-channels ❑ Low input capacitance ❑ Fast switching speeds ❑ Free from secondary breakdowns ❑ Low input and output leakage
Low Threshold DMOS Technology
The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low threshold enhancement-mode (normally-off)
transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Application
❑ Medical Ultrasound Transmitters ❑ High voltage pulsers ❑ Amplifiers ❑ Buffers ❑ Piezoelectric transducer drivers ❑ General purpose line drivers ❑ Logic level interfaces
Package Option
S1 1
N-C...