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S-AU81

Toshiba Semiconductor

RF Power Amplifier Module


Description
www.DataSheet4U.com S-AU81 RF Power Amplifier Module S-AU81 Power Amplifier Modules for Domestic cdmaOne · · · · · GaAs HBT Micro PA (on-chip bias circuit and matching circuit) Output power: Po = 27.0dBmW (min) Gain: Gp = 28.0dB (typ.) Total current: It (1) = 385 mA (typ.) (@Pout = 27.0dBmW) Low-voltage operation: Operation at VCC = 1.5 V is possible It (2...



Toshiba Semiconductor

S-AU81

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