MT3S46T

www.DataSheet4U.com MT3S46T TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S46T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES · · Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e| =11.5dB (@f=2GHz) 2 Marking 3 R5 1 2 TESM JEDEC JEITA Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 40 20 100 150 −55~150 Unit V V V mA mA mW °C °C Maximum Ratings (Ta = 25°C) ― ― 2-1B1A TOSHIBA Weight:0.0022g (typ.) 1 2002-11-14 MT3S46T Microwave Characteristics (Ta = 25°C) Characteristics Transition Frequency Insertion Gain Symbol fT |S21e| (1) |S21e| (2) NF(1) NF(2) 2 2 Test Condition VCE=3V, IC=20mA, f=2GHz VCE=3V, IC=20mA, f=1GHz VCE=3V, IC=20mA, f=2GHz VCE=3V, IC=7mA, f=1GHz VCE=3V, IC=7mA, f=2GHz Min 11.5 9 - Typ. 16 17 11.5 0.9 1.2 Max 1.7 Unit GHz dB dB dB dB Noise Figure Electrical Characteristics (Ta = 25°C) Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Output Capacitance Reverse Transistor Capacitance Symbol ICBO IEBO hFE Cob Cre Test Condition VCB=8V, IE=0 VEB=1V, IC=0 VCE=3V, IC=10mA VCB=1V, IE=0, f=1MHz VCB=1V, IE=0, f=1MHz (Note 1) Min 70 Typ. 0.69 0.34 Max 1 1 140 1.2 0.6 Unit µA µA pF pF Note 1: Cre is measured by 3 terminal method with capacitance bridge. Caution: This device...