MS2604

www.DataSheet4U.com MS2604 RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS Features 2.7 – 3.1 GHz 40 VOLTS POUT = 25 WATTS GP = 6.2 dB MINIMUM GOLD METALLIZATION INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION: The MS2604 is a silicon NPN bipolar transistor designed for pulsed S-Band radar applications. The MS2604 is capable of operation over a wide range of pulse widths and duty cycles. Internal impedance matching and gold metalization provide consistent broadband performance and long term reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCC IC PDISS TJ TSTG Parameter Value 46 4 100 200 -65 to +200 Unit V A W °C °C Collector Supply Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Junction - Case Thermal Resistance 2.0 °C/W 12-05-2002 MS2604 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol BVCBO BVEBO BVCER ICES HFE IC = 15 mA IE = 2 mA IC = 15 mA VCE = 40 V VCE = 5.0 V Test Conditions Min. IE = 0 mA IC = 0 mA RBE = 10 Ω IC = 1.5 A 55 3.5 55 --30 Value Typ. ----------- Max. ------10 150 Unit V V V mA --- DYNAMIC Symbol POUT ηc GPE Conditions Test Conditions Min. f = 2700 - 3100 MHz PIN = 6.0 W VCC = 40V 25 30 6.2 VCC = 40V f = 2700 - 3100 MHz PIN = 6.0 W f = 2700 - 3100 MHz PIN = 6.0 W VCC = 40V Pulse Width = 100 µsec Duty Cycle = 10% Value Typ. ------- Max. ------- Unit W % dB IMPEDANCE DATA Freq 2.7 GHz 2.9 GHz 3.1 GHz PIN = 6 W VCC = 40 V ZIN(Ω) 12.0...