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BRF610 Dataheets PDF



Part Number BRF610
Manufacturers Bipolarics
Logo Bipolarics
Description NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
Datasheet BRF610 DatasheetBRF610 Datasheet (PDF)

www.DataSheet4U.com BIPOLARICS, INC. Part Number BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 12 GHz typ @ I C = 10 mA t DESCRIPTION AND APPLICATIONS: Bipolarics' BRF610is a high performance silicon bipolar transistor intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be realized at 2 mA or less making the BRF610an excellent choice for battery applicatio.

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www.DataSheet4U.com BIPOLARICS, INC. Part Number BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 12 GHz typ @ I C = 10 mA t DESCRIPTION AND APPLICATIONS: Bipolarics' BRF610is a high performance silicon bipolar transistor intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be realized at 2 mA or less making the BRF610an excellent choice for battery applications. From 10 mA to greater than 20mA, ft is nominally 10 GHz. Maximum recommended continuous current is 20 mA. A broad range of packages are offered including SOT-23, SOT-143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and unencapsulated dice. • Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz • High Gain |S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz Absolute Maximum Ratings: SYMBOL PARAMETERS RATING UNITS • Dice, Plastic, Hermetic and Surface Mount packages available VCBO VCEO VEBO IC CONT T J TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature 9 7 1.5 20 200 -65 to 150 V V V mA o C o C PERFORMANCE DATA: • Electrical Characteristics (TA = 25oC) PARAMETERS & CONDITIONS VCE =8V, I C = 10 mA unless stated SYMBOL UNIT MIN. TYP. MAX. f t Gain Bandwidth Product Insertion Power Gain: f = 1.0 GHz f = 2.0 GHz GHz 12 18.1 12.8 |S 21 | 2 P1d B G1d B NF hFE ICBO IEBO C CB Power output at 1dB compression: Gain at 1dB compression: Noise Figure: VCE =8V, I C = 2mA Forward Current Transfer Ratio: VCE = 8V, IC = 10 mA Collector Cutoff Current 0.2 Emitter Cutoff Current : VEB =1V Collector Base Capacitance: VCB = 8V : VCB =8V f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz ZS = 50 Ω f = 1MHz dBm dBm dB 50 12 15 1.6 100 250 µA µA f = 1MHz pF 0.11 1.0 PAGE 2 BIPOLARICS, INC. Part Number BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF61004 Package Style 04: 0.145" Plastic Macro-X BRF61086 Package Style 86: 0.085" Plastic Micro-X, Surface Mount 0.02 .51 1 2 0.032+0.015 2.34+0.38 0.008+0.002 0.203+0.051 4 3 .020+.010 0.51+.25 0.106+0.015 2.67+0.38 0.026+0.001 0.66+0.13 0.085+0.005 2.16+0.13 0.060+0.01 1.52+0.25 BRF61085 PackageStyle 85: 0.085" Plastic Micro-X BRF61087 Package Style 87: 0.085" Plastic Micro-X, Short Lead .020 .51 4 1 3 2 .60+0.10 1.52+.26 .065 2.15 5 .008+.002 .20+.050 .020 .51 .215+.010 5.46+.25 PAGE 3 BIPOLARICS, INC. BRF61002J PackageStyle 02J: SOT-23J Part Number BRF610 BRF61002 PackageStyle 02: SOT-23 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR 0.30 0.51 1.39 1.57 0.45 0.60 1.90 2.25 2.75 0.95 2.65 3.04 0.79 1.1 0.00 0.10 0.10 0.45 0.60 BRF61014 BRF61092 Package Style 14: SOT-143 Package Style 92: TO-92 PAGE 4 BIPOLARICS, INC. Part Number BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF61035 Package Style 35: Micro-X 0.085" Ceramic LEAD Package Style 14, 85, 35 & 10 1 Base 2 Emitter 3 Collector 4 .


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