BGF1901-10

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification Supersedes data of 2003 Nov 17 2004 Oct 11 Philips Semiconductors Product specification GSM1900 EDGE power module FEATURES Typical GSM EDGE performance at a supply voltage of 26 V: – Output power = 3.5 W – Gain = 26.5 dB – Efficiency = 19 % – ACPR < −63 dBc at 400 kHz – rms EVM < 1.2 % – peak EVM < 3.6 %. Low distortion to a CDMA signal Excellent 2-tone performance Low die temperature due to copper flange Integrated temperature compensated bias 50 Ω input/output system Flat gain over frequency band. APPLICATIONS Base station RF power amplifiers in the 1930 to 1990 MHz frequency range GSM, GSM EDGE, multi carrier applications Macrocell (driver stage) and Microcell (final stage). DESCRIPTION 10 W LDMOS power amplifier module for base station amplifier applications in the 1930 to 1990 MHz band. QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C; ZS = ZL = 50 Ω. MODE OF OPERATION CW GSM EDGE Note 1. ACPR 400 kHz at 30 kHz resolution bandwidth. f (MHz) 1930 to 1990 1930 to 1990 VS (V) 26 26 PL (W) 10 3.5 Gp (dB) 25.5 26.5 η (%) 34 19 Top view 1 BGF1901-10 PINNING - SOT365C PIN 1 2 3 Flange RF input VS RF output ground DESCRIPTION 23 MBL257 Fig.1 Simplified outline. ACPR (dBc) − −63(1) rms EVM (%) − 1.2 2004 Oct 11 2 Philips Semiconductors Product specification GSM1900 EDGE power module ORDERING INFORMATION PACKAGE TYPE ...