BGF1801-10

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1801-10 GSM1800 EDGE power module Product specification 2003 Dec 15 Philips Semiconductors Product specification GSM1800 EDGE power module FEATURES Typical GSM EDGE performance at a supply voltage of 26 V: – Output power = 3.5 W – Gain = 26.5 dB – Efficiency = 19% – ACPR < −63 dBc at 400 kHz – rms EVM < 1.2% – peak EVM < 3.6%. Low distortion to CDMA signals Excellent 2-tone performance Low die temperature due to copper flange Integrated temperature compensated bias 50 Ω input/output impedance Flat gain over frequency band. APPLICATIONS Base station RF power amplifiers in the 1805 to 1880 MHz frequency range GSM, GSM EDGE, multi carrier applications Macrocell (driver stage) and Microcell (final stage). DESCRIPTION 10 W LDMOS power amplifier module for base station amplifier applications in the 1805 to 1880 MHz band. QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C; ZS = ZL = 50 Ω. MODE OF OPERATION CW GSM EDGE Note 1. ACPR 400 kHz at 30 kHz resolution bandwidth. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BGF1801-10 − DESCRIPTION f (MHz) 1805 to 1880 1805 to 1880 VS (V) 26 26 PL (W) 10 3.5 Gp (dB) 25.5 26.5 η (%) 34 19 Top view 1 BGF1801-10 PINNING - SOT365C PIN 1 2 3 Flange RF input VS RF output ground DESCRIPTION 23 MBL257 Fig.1 Simplified outline. ACPR (dBc) − −63(1) rms EVM (%) − 1.2 VERSION SOT365C plastic rectangular single-ended flat package; flange mounted; 2 mou...