BFG325

BFG325/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability 1.3 Applications  Intended for Radio Frequency (RF) front end applications in the GHz range, such as:  analog and digital cellular telephones  cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)  radar detectors  pagers  Satellite Antenna TeleVision (SATV) tuners  repeater amplifiers in fiber-optic systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VCBO VCEO IC Ptot hFE CCBS collector-base voltage open emitter collector-emitter voltage open base collector current (DC) total power dissipation DC current gain collector-base capacitance Tsp  90 C IC = 15 mA; VCE = 3 V; Tj = 25 C VCB = 5 V; f = 1 MHz; emitter grounded fT transition frequency IC = 15 mA; VCE = 3 V; f = 1 GHz; Tamb = 25 C Min Typ Max Unit - - 15 V - - 6 V - - 35 mA [1] - - 210 mW 60 100 200 - 0.26 0.4 pF - 14 - GHz NXP Semiconductors BFG325/XR NPN 14 GHz wideband transistor Table 1. Quick reference data …continued Symbol Parameter Conditions Gmax s212 NF maximum power gain[2...