NIS5112
Electronic Fuse
The NIS5112 is an integrated switch utilizing a high side N−channel FET driven by an internal ...
NIS5112
Electronic Fuse
The NIS5112 is an integrated switch utilizing a high side N−channel FET driven by an internal charge pump. This switch features a MOSFET which allows for current sensing using inexpensive chip resistors instead of expensive, low impedance current shunts.
It is designed to operate in 12 V systems and includes a robust thermal protection circuit.
Features
Integrated Power Device Power Device Thermally Protected No External Current Shunt Required Enable/Timer Pin Adjustable Slew Rate for Output Voltage 9 V to 18 V Input Range 30 mW Typical Internal Charge Pump ESD Ratings: Human Body Model (HBM); 4000 V These are Pb−Free Devices
Typical Applications
Hard Drives
8 1
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MARKING DIAGRAM
SOIC−8 NB CASE 751
8
112x AYWWG
G 1
x
= L for thermal latch off
= H for thermal auto−retry
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device NIS5112D1R2G
Package
SOIC−8 Latch Off (Pb−Free)
Shipping†
2500 Tape & Reel
8
NIS5112D2R2G
SOIC−8
2500 /
VCC
Auto−Retry Tape & Reel
(Pb−Free)
Voltage
Regulator
Charge Pump
Thermal Latch
Overvoltage Clamp
Current Limit
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Current Limit 4
Source 5, 6, 7
Enable/ Timer
Voltage Slew Rate
Enable/Timer 3
GND 1
Figure 1. B...