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NGB8204N

Part Number	NGB8204N
Manufacturer	ON Semiconductor
Description	Ignition IGBT
Published	Jan 17, 2007
Detailed Description	NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transisto...
Datasheet	NGB8204N PDF File

Overview

NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications.
Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features • Ideal for Coil−on−Plug Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area • Low Threshold Voltage to Interface Power Loads to ...

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