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NGD15N41CLT4 Dataheets PDF



Part Number NGD15N41CLT4
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Ignition IGBT
Datasheet NGD15N41CLT4 DatasheetNGD15N41CLT4 Datasheet (PDF)

www.DataSheet4U.com NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. • Ideal for Coil−on−Plug Applications • DPAK Pack.

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www.DataSheet4U.com NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. • Ideal for Coil−on−Plug Applications • DPAK Package Offers Smaller Footprint and Increased Board Space • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability • Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD (Machine Model) R = 0 Ω, C = 200 pF Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VCES VCER VGE IC ESD 8.0 ESD PD TJ, Tstg 800 107 0.71 −55 to +175 V Watts W/°C °C 1 Value 440 440 15 15 50 Unit VDC VDC VDC ADC AAC kV TO−220AB CASE 221A STYLE 9 1 2 3 4 4 D2PAK CASE 418B STYLE 4 http://onsemi.com 15 AMPS 410 VOLTS VCE(on) 3 2.1 V @ IC = 10 A, VGE . 4.5 V C G RG RGE E 4 1 2 3 DPAK CASE 369C STYLE 2 2 3 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. DEVICE MARKING INFORMATION See general marking information in the device marking section on page 8 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2004 1 March, 2004 − Rev. 5 Publication Order Number: NGD15N41CL/D NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Characteristic Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.6 A, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 15 A, L = 1.8 mH, Starting TJ = 125°C Symbol EAS 250 200 Value Unit mJ THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient DPAK (Note 1) D2PAK (Note 1) Symbol RθJC RθJA RθJA RθJA TL Value 1.4 100 50 62.5 275 °C Unit °C/W TO−220 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Clamp Clam Voltage BVCES IC = 2.0 mA IC = 10 mA Zero Gate Voltage g Collector Current ICES VCE = 350 V V, VGE = 0 V Reverse Collector−Emitter Leakage g Current IECS VCE = −24 24 V TJ = −40°C to 150°C TJ = −40°C to 150°C TJ = 25°C TJ = 150°C TJ = −40°C TJ = 25°C TJ = 150°C TJ = −40°C Reverse Collector−Emitter Clamp Voltage g BVCES(R) IC = −75 75 mA A TJ = 25°C TJ = 150°C TJ = −40°C Gate−Emitter Clamp Voltage Gate−Emitter Leakage Current Gate Resistor (Optional) Gate Emitter Resistor BVGES IGES RG RGE IG = 5.0 mA VGE = 10 V − − TJ = −40°C to 150°C TJ = −40°C to 150°C TJ = −40°C to 150°C TJ = −40°C to 150°C 380 380 − − − − − − 27 30 25 11 384 − 10 410 410 2.0 10 1.0 0.7 12 0.1 33 36 31 13 640 70 16 440 440 20 40* 10 2.0 25* 1.0 37 40 35 15 1000 − 26 VDC µADC Ω VDC µADC mA VDC kΩ ON CHARACTERISTICS (Note 2) Gate Threshold Voltage g VGE(th) IC = 1 1.0 0 mA, A VGE = VCE Threshold Temperature Coefficient (Negative) − − TJ = 25°C TJ = 150°C TJ = −40°C − 1.1 0.75 1.2 − 1.4 1.0 1.6 3.4 1.9 1.4 2.1* − mV/°C VDC 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range. http://onsemi.com 2 NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit ON CHARACTERISTICS (continued) (Note 3) Collector−to−Emitter On−Voltage g VCE(on) IC = 6 6.0 0A A, VGE = 4.0 V TJ = 25°C TJ = 150°C TJ = −40°C TJ = 25°C IC = 8 8.0 0A A, VGE = 4.0 V TJ = 150°C TJ = −40°C TJ = 25°C IC = 10 A A, VGE = 4.0 V TJ = 150°C TJ = −40°C TJ = 25°C IC = 10 A A, VGE = 4.5 V Forward Transconductance gfs VCE = 5.0 V, IC = 6.0 A TJ = 150°C TJ = −40°C TJ = −40°C to 150°C 1.0 0.9 1.1 1.3 1.2 1.4 1.4 1.5 1.4 1.3 1.3 1.4 8.0 1.6 1.5 1.65 1.8 1.7 1.8 2.0 2.0 2.0 1.9 1.9 1.95 15 1.8 1.8 1.9* 2.0* 1.9 2.0* 2.2 2.3* 2.2 2.1 2.1 2.1* 25 Mhos VDC DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance CISS COSS CRSS TJ = 25°C TJ = 150°C TJ = 25°C TJ = 15.


NGB15N41CLT4 NGD15N41CLT4 NGP15N41CL


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