MMVL109T1

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Epicap Diode MMVL109T1 Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods. 26–32 pF VOLTAGEVARIABLE CAPACITANCE DIODES 1 High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Surface Mount Package Device Marking: 4A 2 PLASTIC, CASE 477 SOD– 323 ORDERING INFORMATION Device MMVL109T1 Package SOD–323 Shipping 3000 / Tape & Reel 1 CATHODE 2 ANODE MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Value 30 200 Max 200 1.57 635 -55 to +150 Unit Vdc mAdc Unit mW mW/°C °C/W °C THERMAL CHARACTERISTICS RθJA TJ, Tstg *FR–5 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current Symbol V(BR)R Min 30 Typ — Max — Unit Vdc IR TCC — — — 300 0.1 — µAdc ppm/°C (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance Q, Figure of Merit VR = 3.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc pF f = 50 MHz Device Min Nom Max Min MMVL109T1 26 29 32 200 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc. CR, Capacitance Ratio C3/C25 f...