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MMT10B350T3 Dataheets PDF



Part Number MMT10B350T3
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Thyristor Surge Protectors High Voltage Bidirectional TSPD
Datasheet MMT10B350T3 DatasheetMMT10B350T3 Datasheet (PDF)

www.DataSheet4U.com MMT10B350T3 Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover−triggered crowbar protectors. Turn−off occurs when the surge current falls below the holding current value. Secondary protection applications for electronic telecom equipment at customer premises. Features http://onsemi.co.

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www.DataSheet4U.com MMT10B350T3 Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover−triggered crowbar protectors. Turn−off occurs when the surge current falls below the holding current value. Secondary protection applications for electronic telecom equipment at customer premises. Features http://onsemi.com BIDIRECTIONAL TSPD ( ) 100 AMP SURGE, 350 VOLTS • High Surge Current Capability: 100 Amps 10 x 1000 msec, for • • • • • • • • Controlled Temperature Environments The MMT10B350T3 Series is used to help equipment meet various regulatory requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950, UL 1459 & 1950 and FCC Part 68. Bidirectional Protection in a Single Device Little Change of Voltage Limit with Transient Amplitude or Rate Freedom from Wearout Mechanisms Present in Non−Semiconductor Devices Fail−Safe, Shorts When Overstressed, Preventing Continued Unprotected Operation Surface Mount Technology (SMT) Indicates UL Recognized − File #E210057 Pb−Free Package is Available MT1 MT2 SMB (No Polarity) (Essentially JEDEC DO−214AA) CASE 403C MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Off−State Voltage − Maximum Maximum Pulse Surge Short Circuit Current Non−Repetitive Double Exponential Decay Waveform (Notes 1 and 2) 10 x 1000 msec −25°C Initial Temperature 2 x 10 msec 10 x 160 msec 10 x 700 msec Maximum Non−Repetitive Rate of Change of On−State Current Double Exponential Waveform, R = 2.4 W, L = 2.0 mH, C = 2.0 mF, Ipk = 110 A Symbol VDM Value 300 Unit V A(pk) AYWW RPDM G G IPPS1 IPPS2 IPPS3 IPPS4 di/dt "100 "500 "200 "180 "100 A/ms A = Assembly Location Y = Year WW = Work Week RPDM = Device Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MMT10B350T3 MMT10B350T3G Package SMB Shipping † 2500/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating. SMB 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 2 Publication Order Number: MMT10B350T3/D MMT10B350T3 THERMAL CHARACTERISTICS Characteristic Operating Temperature Range Blocking or Conducting State Overload Junction Temperature − Maximum Conducting State Only Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol TJ1 TJ2 TL Max −40 to + 125 + 175 260 Unit °C °C °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Characteristics Breakover Voltage (Both polarities) (dv/dt = 100 V/ms, ISC = 1.0 A, Vdc = 1000 V) (+65°C) Breakover Voltage (Both polarities) (f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), RI = 1.0 kW, t = 0.5 cycle) (Note 3) (+65°C) Breakover Voltage Temperature Coefficient Breakdown Voltage (I(BR) = 1.0 mA) Both polarities Off State Current (VD1 = 50 V) Both polarities Off State Current (VD2 = VDM) Both polarities On−State Voltage (IT = 1.0 A) (PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 3) Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kW) Both polarities Holding Current (Both polarities) (Note 3) VS = 500 V; IT (Initiating Current) = "1.0 A Critical Rate of Rise of Off−State Voltage (Linear waveform, VD = Rated VBR, TJ = 25°C) Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal) Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal) 3. Measured under pulse conditions to reduce heating. Symbol V(BO) − − V(BO) − − dV(BO)/dTJ V(BR) ID1 ID2 VT IBO IH dv/dt CO − − − − − − 150 2000 − − − − 0.12 350 − − 1.82 475 300 − 40 81 400 412 − − 2.0 5.0 5.0 − − − − 85 V/°C V mA V mA mA V/ms pF − − 400 412 V Min Typ Max Unit V Voltage Current Characteristic of TSPD (Bidirectional Device) + Current Symbol ID1, ID2 VD1, VD2 VBR VBO IBO IH VTM Parameter Off State Leakage Current Off State Blocking Voltage Breakdown Voltage Breakover Voltage Breakover Current Holding Current On State Voltage + Voltage VD1 VD2 V(BR) IH ID1 ID2 I(BO) VTM V(BO) http://onsemi.com 2 MMT10B350T3 VBR, BREAKDOWN VOLTAGE (VOLTS) 100 ID1, OFF−STATE CURRENT (mA) VD1 = 50V 10 400 390 380 370 360 350 340 330 320 −60 −40 −20 0 20 40 60 80 TEMPERATURE (°C) 100 120 140 1.0 0.1 0.01 .


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