Silicon Tuning Diode
www.DataSheet4U.com
MMVL409T1
Preferred Device
Silicon Tuning Diode
These devices are designed for general frequency c...
Description
www.DataSheet4U.com
MMVL409T1
Preferred Device
Silicon Tuning Diode
These devices are designed for general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Surface Mount Package Device Marking: X5
http://onsemi.com
VOLTAGE VARIABLE CAPACITANCE DIODE
MAXIMUM RATINGS
Symbol VR IF Rating Continuous Reverse Voltage Peak Forward Current Value 20 200 Unit Vdc mAdc
1 2
THERMAL CHARACTERISTICS
Symbol PD Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Max 200 1.57 635 150 Unit mW mW/°C °C/W °C
PLASTIC SOD–323 CASE 477
RqJA TJ, Tstg
*FR–4 Minimum Pad 1 CATHODE 2 ANODE
ORDERING INFORMATION
Device MMVL409T1 Package SOD–323 Shipping 3000 / Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
January, 2000 – Rev. 1
Publication Order Number: MMVL409T1/D
MMVL409T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 20 — — Typ — — 300 Max — 0.1 — Unit Vdc µAdc ppm/°C
Ct, Diode Capacitance VR = 3.0 Vdc, f = ...
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