MMVL409T1

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMVL409T1 These devices are designed for general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. VOLTAGEVARIABLE CAPACITANCEDIODE 1 High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Surface Mount Package Device Marking: X5 1 CATHODE 2 ANODE 2 PLASTIC, CASE 477 SOD– 323 ORDERING INFORMATION Device MMVL409T1 Package SOD–323 Shipping 3000 / Tape & Reel MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Value 20 200 Max 200 1.57 635 150 Unit Vdc mAdc Unit mW mW/°C °C/W °C THERMAL CHARACTERISTICS RθJA TJ, Tstg *FR–4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 20 — — Typ — — 300 Max — 0.1 — Unit Vdc µAdc ppm/°C Ct, Diode Capacitance Q, Figure of Merit VR = 3.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc pF f = 50 MHz Device Min Nom Max Min MMVL409T1 26 29 32 200 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc. CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1...