MMVL3700T1

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. High Voltage Silicon Pin Diode These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic surface mount package for economical, high–volume consumer and industrial requirements. Long Reverse Recovery Time trr = 300 ns (Typ) Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability Low Series Resistance @ 100 MHz – RS = 0.7 Ω (Typ) @ IF = 10 mAdc Reverse Breakdown Voltage = 200 V (Min) Device Marking: 4R MMVL3700T1 SILICON PIN SWITCHING DIODE 1 2 PLASTIC, CASE 477 SOD– 323 ORDERING INFORMATION Device MMVL3700T1 Package SOD–323 Shipping 3000 / Tape & Reel 1 CATHODE 2 ANODE MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Value 200 20 Max 200 1.57 635 150 Unit Vdc mAdc Unit mW mW/°C °C/W °C THERMAL CHARACTERISTICS RθJA TJ, Tstg *FR–4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse BreakdownVoltage (I R = 10 µAdc) Diode Capacitance (VR = 20 Vdc, f = 1.0 MHz) Series Resistance (IF = 10 mAdc) Reverse Leakage Current (VR = 150 Vdc) Reverse Recovery Time (IF = IR = 10 mAdc) Symbol V(BR)R CT RS IR trr Min 200 — — — — Typ — — 0...