ADG1236

Data Sheet Low Capacitance, Low Charge Injection, ±15 V/12 V iCMOS, Dual SPDT Switch ADG1236 FEATURES 1.3 pF off capacitance 3.5 pF on capacitance 1 pC charge injection 33 V supply range 120 Ω on resistance Fully specified at +12 V, ±15 V No VL supply required 3 V logic-compatible inputs Rail-to-rail operation 16-lead TSSOP and 12-lead LFCSP packages Typical power consumption: <0.03 µW APPLICATIONS Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Audio/video signal routing Communication systems GENERAL DESCRIPTION The ADG1236 is a monolithic CMOS device containing two independently selectable SPDT switches. It is designed on an iCMOS® process. iCMOS (industrial CMOS) is a modular manufacturing process combining high voltage complementary metal-oxide semiconductor (CMOS) and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage devices has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size. The ultralow capacitance and charge injection of the device make it an ideal solution for data acquisition and sample-andhold applications, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwid...