MA26V15

www.DataSheet4U.com Variable Capacitance Diodes MA26V15 Silicon epitaxial planar type Unit: mm For VCO ■ Features Good linearity and large capacitance-ratio in CD − VR relation Small series resistance rD High frequency type by this low capacitance 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01 −0.03 0.25±0.05 0.50±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 3 0.65±0.01 2 0.05±0.03 1: Anode 2: N.C. 3: Cathode ML3-N2 Package Marking Symbol: 2N ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Diode capacitance Symbol IR CD(0.5V) CD(2.5V) Capacitance ratio Series resistance * Conditions VR = 5 V VR = 0.5 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 1 V, f = 470 MHz Min Typ Max 10 7.30 2.98 2.35 7.91 3.23 2.55 0.45 CD(0.5V)/CD(2.5V) rD Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 470 MHz 3. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.15±0.05 0.05±0.03 0.35±0.01 Unit nA pF  Ω Publication date: July 7, 2003 SKD00083CED 1 MA26V15 IF  VF 120 CD  VR 102 CD  Ta 1.044 f = 1 MHz Ta = 25°C f = 1 MHz 1.036 1.028 VR = 0.5 V 100 Ta = 60°C −40°C 25°C CD (Ta) CD (Ta = 25°C) 80 Diode capacitance CD (pF) Forward current IF (mA) 1.020 1.012 1.004 0.996 0.988 2.5 V 60 10 40 20 0 ...