MA26V01

www.DataSheet4U.com Variable Capacitance Diodes MA26V01 Silicon epitaxial planar type Unit: mm For VCO ■ Features Good linearity and large capacitance-ratio in CD − VR relation Small series resistance rD 1.00±0.05 0.60±0.05 3 2 1 0.39+0.01 −0.03 0.25±0.05 0.50±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 0.25±0.05 1 3 0.65±0.01 2 0.05±0.03 1: Anode 2: N.C. 3: Cathode ML3-N2 Package Marking Symbol: 2D ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Diode capacitance Symbol IR CD1V CD3V Capacitance ratio Series resistance * Conditions VR = 6 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz CD = 9 pF, f = 470 MHz Min Typ Max 10 15.0 5.0 2.2 17.0 7.0 CD1V /CD3V rD 1.0 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 470 MHz. 3. *: Measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.15±0.05 0.05±0.03 0.35±0.01 Unit nA pF  Ω Publication date: November 2003 SKD00072CED 1 MA26V01 IF  V F 120 102 CD  VR f = 1 MHz Ta = 25°C CD  Ta 1.045 1.037 1.029 VR = 1 V f = 1 MHz 100 Diode capacitance CD (pF) Forward current IF (mA) Ta = 60°C −40°C CD (Ta) CD (Ta = 25°C) 80 10 1.021 3V 1.013 1.005 0.997 0.989 60 25°C 40 1 20 0 10−1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.981 0 2 4 6 8 0 20 40 60 80 100...