MA26376

www.DataSheet4U.com Variable Capacitance Diodes MA26376 Silicon epitaxial planar type Unit: mm For UHF wireless telegraphic VCO 0.60±0.05 ■ Features Good linearity and large capacitance-ratio in CD − VR relation Small series resistance rD 3 2 1 1.00±0.05 0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 0.25±0.05 1 3 0.65±0.01 2 0.05±0.03 1: Anode 2: N.C. 3: Cathode ML3-N2 Package Marking Symbol: 2T ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Diode capacitance Series resistance * Symbol IR CD1V CD3V rD VR = 6 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz CD = 9 pF, f = 470 MHz 14.00 6.80 Conditions Min Typ Max 10 16.00 8.90 0.3 Ω Unit nA pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes. 2. Absolute frequency of input and output is 470 MHz. 3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER Publication date: January 2004 SKD00071CED 1 MA26376 IF  V F 120 25°C CD  VR 102 f = 1 MHz Ta = 25°C 1.032 f = 1 MHz CD  Ta 100 Diode capacitance CD (pF) Forward current IF (mA) 1.024 VR = 1 V Ta = 60°C CD (Ta) CD (Ta = 25°C) 80 1.016 3V 60 −40°C 10 1.008 40 1.000 20 0.992 0 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 0.984 0 20 40 60 80 100 Forward voltage VF (...