HAD826

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6411-B Issued Date : 199.03.06 Revised Date : 2000.09.01 Page No. : 1/3 HAD826 NPN EPITAXIAL PLANAR TRANSISTOR Description The HAD826 is designed for general purpose amplifier and high speed, medium-power switching applications. Features Low Collector Saturation Voltage High Speed Switching Absolute Maximum Ratings Maximum Temperatures Storage Temperature .......................................................................................... -55 ~ +150 °C Junction Temperature..................................................................................... 150 °C Maximum Maximum Power Dissipations Total Power Dissipation (Ta=25°C) .............................................................................. 625 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ 75 V VCEO Collector to Emit...