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NE677M04

CEL
Part Number NE677M04
Manufacturer CEL
Description NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
Published Dec 29, 2006
Detailed Description www.DataSheet4U.com NEC's MEDIUM POWER NPN SILICON HIGH FREQUENCY NE677M04 TRANSISTOR FEATURES • • • • HIGH GAIN BANDWI...
Datasheet PDF File NE677M04 PDF File

NE677M04
NE677M04

Overview
www.
DataSheet4U.
com NEC's MEDIUM POWER NPN SILICON HIGH FREQUENCY NE677M04 TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH OUTPUT POWER: P-1dB = 15 dBm at 1.
8 GHz HIGH LINEAR GAIN: GL = 15.
5 dB at 1.
8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.
59 mm Flat lead style for better RF performance +0.
40-0.
05 2 +0.
30 2.
05±0.
1 1.
25±0.
1 3 2.
0±0.
1 R54 1.
25 0.
650.
65 0.
650.
65 DESCRIPTION NEC's NE677M04 is fabricated using NEC's HFT3 wafer process.
With a transition frequency of 15 GHz, the NE677M04 is usable in applications from 100 MHz to 3 GHz.
The NE677M04 provides P1dB of 15 dBm, even with low voltage and low current, making this device an e...


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