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RO-P-DS-3070
0.5W X/Ku-Band Power Amplifier 8.0-12.0 GHz
MAAPGM0034
Preliminary Information Features
♦ ♦ ♦ ♦ ♦
8.0-12.0 GHz GaAs MMIC Amplifier
8.0-12.0 GHz Operation 0.5 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation Self-Aligned MSAG ® MESFET Process High Performance Ceramic Bolt Down Package
APGM0034 YWWLLLL
Primary Applications
♦ Point-to-Point Radio ♦ Weather Radar ♦ Airborne Radar
Description
The MAAPGM0034 is a packaged, 2-stage, 0.5 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction Self-Aligned Gate (MSAG ®) MESFET Process.
Pin Number 1 2 3 4 5 6 7 8 9 10
Description No Connection No Connection RF IN No Connection V GG No Connection No Connection RF OUT No Connection V DD
Maximum Operating Conditions
Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature
1 Absolute Maximum 21.0 +12.0 -3.0 150 1.5 180 -55 to +150 Units dBm V V mA W °C °C
Symbol PIN VDD VGG IDQ PDISS TJ TSTG
1. Operation outside of these ranges may reduce product reliability.
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0.5W X/Ku-Band Power Amplifier Recommended Operating Conditions
Characteristic Drain Supply Voltage Gate Supply Voltage Input Power Junction Temperature Thermal Resistance MMIC Base Temperature Symbol VDD VGG PIN TJ T JC TB 58.6 Min 4.0 -2.3 Typ 8.0 -2.0 16.0
MAAPGM0034
Max 10.0 -1.5 19.0 150
Unit V V dBm °C °C/W
Note 2
°C
2. Maximum MMIC Base Temperature = 150°C — T JC* VDD * IDQ
Electrical Characteristics: TB = 40°C3, Z0 = 50 Ω , V DD = 10V, V GG = -1.8V, Pin = 16 dBm, R G = 604O
Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Output VSWR Gate Supply Current Drain Supply Current Noise Figure 2nd Harmonic 3rd Harmonic Symbol f POUT PAE P1dB G VSWR VSWR IGG IDD NF 2f 3f OTOI IM3 IM5 Typical 8.0-12.0 27.5 30 27 14.5 2.5:1 2.5:1 <2 < 200 8.5 -28 -35 33 -13 -36 mA mA dB dBc dBc dBm dBm dBm Units GHz dBm % dBm dB
Output Third Order Intercept 3rd Order Intermodulation Distortion, Single Carrier Level = 17 dBm 5th Order Intermodulation Distortion, Single Carrier Level = 17 dBm 3. T B = MMIC Base Temperature
Operating Instructions
This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -1.8 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8 V. 3. Adjust VGG to set IDQ, (approxmately @ –1.8V). 4. Set RF input.
5. Power down sequence in reverse. Turn VGG off last.
Specifications subject to change without notice.
Email:
[email protected]
n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
V 1.00 Visit www.macom.com for additional data sheets and product information.
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0.5W X/Ku-Band Power Amplifier
MAAPGM0034
50
POUT PAE
50
40
40
POUT (dBm)
20
20
10
10
0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Frequency (GHz)
0 12.5
Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 10V and Pin = 16 dBm.
50 POUT PAE 40
50
40
POUT (dBm)
30
30 PAE(%)
20
20
10
10
0 4 5 6 7 Drain Voltage (V) 8 9 10
0
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 10 GHz.
Specifications subject to change without notice.
Email:
[email protected]
n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
V 1.00 Visit www.macom.com for additional data sheets and product information.
PAE(%)
30
30
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0.5W X/Ku-Band Power Amplifier
MAAPGM0034
40 35 30 P1dB (dBm) 25 20 15 10 5 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage VDD = 4 VDD = 8 VDD = 6 VDD = 10
25 Gain Input VSWR Output VSWR Gain (dB) 15
6
20
5
4 VSWR
10
3
5
2
0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Frequency (GHz) Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 10V.
1 12.5
Specifications subject to change without notice.
Email:
[email protected]
n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
V 1.00 Visit www.macom.com for additional data sheets and product information.
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0.5W X/Ku-Band Power Amplifier
MAAPGM0034
APGM0034
Figure 5. CR-15 Package Dimensions
The CR-15 is a high frequency, low thermal re.