HiPerFRED Epitaxial Diode
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ADVANCE TECHNICAL INFORMATION
DSEC29-06AC
HiPerFREDTM Epitaxial Diode
ISOPLUS220TM
Electrically I...
Description
www.DataSheet4U.com
ADVANCE TECHNICAL INFORMATION
DSEC29-06AC
HiPerFREDTM Epitaxial Diode
ISOPLUS220TM
Electrically Isolated Back Surface
IFAV = 2x15 A VRRM = 600 V trr = 35 ns
VRSM V 600
VRRM V 600
Type
ISOPLUS220TM
1 1 2 3 2 3 Isolated back surface * * Patent pending
DSEC29-06AC
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight
Conditions TC = 140°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive
Maximum Ratings 35 15 110 0.1 0.1 -55...+175 175 -55...+150 A A A mJ A °C °C °C W V~ N / lb g Applications
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Features
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TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical
95 2500 11...65 / 2.4...11 3
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<15pF) Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
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Symbol IR
Q
Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 15 A; TVJ = 150°C TVJ = 25°C
Characteristic Values typ. max. 100 0.5 1.49 2.04 1.6 0.6 µA mA V V K/W K/W ns 4.9 A
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VF R RthJC RthCH trr IRM
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Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) ...
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