N-Channel E nhancement Mode Field E ffect Transistor
Description
www.DataSheet4U.com
S DP /B 55N02
S amHop Microelectronics C orp. May,2004 ver1.1
N-Channel E nhancement Mode Field E ffect Transistor
4
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
Max
ID
32A
R DS (on) ( m W )
S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package.
19 @ V G S = ...
